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Tzu-Ming Lu
Tzu-Ming Lu
Bestätigte E-Mail-Adresse bei sandia.gov
Titel
Zitiert von
Zitiert von
Jahr
Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6× 106 cm2/Vs
TM Lu, DC Tsui, CH Lee, CW Liu
Applied Physics Letters 94 (18), 2009
812009
Atomic precision advanced manufacturing for digital electronics
DR Ward, SW Schmucker, EM Anderson, E Bussmann, L Tracy, TM Lu, ...
arXiv preprint arXiv:2002.11003, 2020
412020
Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
TM Lu, CH Lee, SH Huang, DC Tsui, CW Liu
Applied Physics Letters 99 (15), 2011
412011
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
TM Lu, NC Bishop, T Pluym, J Means, PG Kotula, J Cederberg, LA Tracy, ...
Applied Physics Letters 99 (4), 2011
412011
Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
SH Huang, TM Lu, SC Lu, CH Lee, CW Liu, DC Tsui
Applied Physics Letters 101, 042111, 2012
392012
Single and double hole quantum dots in strained Ge/SiGe quantum wells
WJ Hardy, CT Harris, YH Su, Y Chuang, J Moussa, LN Maurer, JY Li, ...
Nanotechnology 30 (21), 215202, 2019
382019
Scattering mechanisms in shallow undoped Si/SiGe quantum wells
D Laroche, SH Huang, E Nielsen, Y Chuang, JY Li, CW Liu, TM Lu
AIP Advances 5 (10), 2015
382015
Valley splitting of Si∕ Si_ {1− x} Ge_ {x} heterostructures in tilted magnetic fields
K Lai, TM Lu, W Pan, DC Tsui, S Lyon, J Liu, YH Xie, M Mühlberger, ...
Physical Review B 73 (16), 161301, 2006
372006
Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures
YH Su, Y Chuang, CY Liu, JY Li, TM Lu
Physical Review Materials 1 (4), 044601, 2017
362017
Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure
D Laroche, SH Huang, Y Chuang, JY Li, CW Liu, TM Lu
Applied Physics Letters 108 (23), 2016
332016
Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors
TM Lu, W Pan, DC Tsui, CH Lee, CW Liu
Physical Review B 85 (12), 121307, 2012
312012
Cyclotron mass of two-dimensional holes in (100) oriented GaAs∕ AlGaAs heterostructures
TM Lu, ZF Li, DC Tsui, MJ Manfra, LN Pfeiffer, KW West
Applied Physics Letters 92 (1), 2008
312008
All-optical lithography process for contacting nanometer precision donor devices
DR Ward, MT Marshall, DM Campbell, TM Lu, JC Koepke, ...
Applied Physics Letters 111 (19), 2017
292017
Electron spin lifetime of a single antimony donor in silicon
LA Tracy, TM Lu, NC Bishop, GA Ten Eyck, T Pluym, JR Wendt, MP Lilly, ...
Applied Physics Letters 103 (14), 2013
292013
Induced superconducting pairing in integer quantum Hall edge states
M Hatefipour, JJ Cuozzo, J Kanter, WM Strickland, CR Allemang, TM Lu, ...
Nano Letters 22 (15), 6173-6178, 2022
282022
Effective g factor of low-density two-dimensional holes in a Ge quantum well
TM Lu, CT Harris, SH Huang, Y Chuang, JY Li, CW Liu
Applied Physics Letters 111 (10), 2017
282017
Capacitively induced high mobility two-dimensional electron gas in undoped Si∕ Si1− xGex heterostructures with atomic-layer-deposited dielectric
TM Lu, J Liu, J Kim, K Lai, DC Tsui, YH Xie
Applied physics letters 90 (18), 2007
282007
Designing nanomagnet arrays for topological nanowires in silicon
LN Maurer, JK Gamble, L Tracy, S Eley, TM Lu
Physical Review Applied 10 (5), 054071, 2018
232018
In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20 mK
TM Lu, L Sun, DC Tsui, S Lyon, W Pan, M Mühlberger, F Schäffler, J Liu, ...
Physical Review B 78 (23), 233309, 2008
232008
Strain effects on rashba spin‐orbit coupling of 2D hole gases in GeSn/Ge heterostructures
CT Tai, PY Chiu, CY Liu, HS Kao, CT Harris, TM Lu, CT Hsieh, SW Chang, ...
Advanced Materials 33 (26), 2007862, 2021
212021
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