Richard Haight
Richard Haight
IBM T.J. Watson Research Center
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Electron dynamics at surfaces
R Haight
Surface science reports 21 (8), 275-325, 1995
Band alignment at the Cu2ZnSn (SxSe1− x) 4/CdS interface
R Haight, A Barkhouse, O Gunawan, B Shin, M Copel, M Hopstaken, ...
Applied Physics Letters 98 (25), 2011
Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (AgxCu1–x)2ZnSnSe4
T Gershon, YS Lee, P Antunez, R Mankad, S Singh, D Bishop, ...
Advanced Energy Materials 6 (10), 1502468, 2016
Cd-free buffer layer materials on Cu2ZnSn (SxSe1− x) 4: Band alignments with ZnO, ZnS, and In2S3
DAR Barkhouse, R Haight, N Sakai, H Hiroi, H Sugimoto, DB Mitzi
Applied Physics Letters 100 (19), 2012
Complex formation and growth at the Cr–and Cu–polyimide interface
R Haight, RC White, BD Silverman, PS Ho
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6 (4 …, 1988
Organic light emitting diodes having transparent cathode structures
S Guha, RA Haight, JM Karasinski, RR Troutman
US Patent 5,739,545, 1998
Solar-powering the Internet of Things
R Haight, W Haensch, D Friedman
Science 353 (6295), 124-125, 2016
Picosecond time-resolved photoemission study of the InP (110) surface
R Haight, J Bokor, J Stark, RH Storz, RR Freeman, PH Bucksbaum
Physical review letters 54 (12), 1302, 1985
Impact of nanoscale elemental distribution in high‐performance kesterite solar cells
K Sardashti, R Haight, T Gokmen, W Wang, LY Chang, DB Mitzi, ...
Advanced Energy Materials 5 (10), 1402180, 2015
Hybrid organic-inorganic semiconductor light emitting diodes
NA Bojarczuk Jr, S Guha, RA Haight
US Patent 5,898,185, 1999
Antibonding state on the Ge (111): As surface: spectroscopy and dynamics
R Haight, DR Peale
Physical review letters 70 (25), 3979, 1993
Ultrathin high band gap solar cells with improved efficiencies from the world’s oldest photovoltaic material
TK Todorov, S Singh, DM Bishop, O Gunawan, YS Lee, TS Gershon, ...
Nature communications 8 (1), 682, 2017
Optically transparent diffusion barrier and top electrode in organic light emitting diode structures
RA Haight, RR Troutman
US Patent 5,714,838, 1998
Method for minimizing sample damage during the ablation of material using a focused ultrashort pulsed laser beam
RA Haight, PP Longo, DP Morris, A Wagner
US Patent 7,649,153, 2010
HYDROGEN ADSORPTION ON Si (110)-(7 multiplied by 7).
RJ Culbertson, LC Feldman, PJ Silverman, R Haight
Journal of vacuum science & technology 20 (3), 868-871, 1981
Photovoltaic Device with over 5% Efficiency Based on an n‐Type Ag2ZnSnSe4 Absorber
T Gershon, K Sardashti, O Gunawan, R Mankad, S Singh, YS Lee, JA Ott, ...
Advanced Energy Materials 6 (22), 1601182, 2016
Atomic structure at the (111) Si‐SiO2 interface
R Haight, LC Feldman
Journal of Applied Physics 53 (7), 4884-4887, 1982
Removal of charged defects from metal oxide-gate stacks
EA Cartier, MW Copel, S Guha, RA Haight, FR McFeely, V Narayanan
US Patent 7,488,656, 2009
Role of oxygen vacancies in V/sub FB//V/sub t/stability of pFET metals on HfO/sub 2
E Cartier, FR McFeely, V Narayanan, P Jamison, BP Linder, M Copel, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 230-231, 2005
Electronic and elemental properties of the Cu2ZnSn (S, Se) 4 surface and grain boundaries
R Haight, X Shao, W Wang, DB Mitzi
Applied Physics Letters 104 (3), 2014
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