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Chalermchai Himwas
Chalermchai Himwas
Semiconductor Device Research Laboratory, Chulalongkorn University
Bestätigte E-Mail-Adresse bei chula.ac.th
Titel
Zitiert von
Zitiert von
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Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
L Redaelli, A Mukhtarova, S Valdueza-Felip, A Ajay, C Bougerol, ...
Applied Physics Letters 105 (13), 2014
822014
Determination of n-type doping level in single GaAs nanowires by cathodoluminescence
HL Chen, C Himwas, A Scaccabarozzi, P Rale, F Oehler, A Lemaître, ...
Nano letters 17 (11), 6667-6675, 2017
462017
Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots
C Himwas, R Songmuang, LS Dang, J Bleuse, L Rapenne, ...
Applied Physics Letters 101 (24), 2012
412012
Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission
C Himwas, M Den Hertog, LS Dang, E Monroy, R Songmuang
Applied Physics Letters 105 (24), 2014
392014
In situ passivation of GaAsP nanowires
C Himwas, S Collin, P Rale, N Chauvin, G Patriarche, F Oehler, FH Julien, ...
Nanotechnology 28 (49), 495707, 2017
352017
Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots
C Himwas, M Den Hertog, E Bellet-Amalric, R Songmuang, F Donatini, ...
Journal of Applied Physics 116 (2), 2014
272014
Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications
O Saket, C Himwas, V Piazza, F Bayle, A Cattoni, F Oehler, G Patriarche, ...
Nanotechnology 31 (14), 145708, 2020
202020
AlGaN/AlN quantum dots for UV light emitters
C Himwas, M Hertog, F Donatini, LS Dang, L Rapenne, E Sarigiannidou, ...
physica status solidi c 10 (3), 285-288, 2013
142013
Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns
C Himwas, S Panyakeow, S Kanjanachuchai
Nanoscale research letters 6, 1-7, 2011
112011
Correlated optical and structural analyses of individual GaAsP/GaP core–shell nanowires
C Himwas, S Collin, HL Chen, G Patriarche, F Oehler, L Travers, O Saket, ...
Nanotechnology 30 (30), 304001, 2019
102019
Optical properties of lattice-matched GaAsPBi multiple quantum wells grown on GaAs (001)
C Himwas, S Kijamnajsuk, V Yordsri, C Thanachayanont, T Wongpinij, ...
Semiconductor Science and Technology 36 (4), 045014, 2021
62021
Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires
O Saket, C Himwas, A Cattoni, F Oehler, F Bayle, S Collin, L Travers, ...
Applied Physics Letters 117 (12), 2020
62020
GaAsPBi epitaxial layer grown by molecular beam epitaxy
C Himwas, A Soison, S Kijamnajsuk, T Wongpinij, C Euaraksakul, ...
Semiconductor Science and Technology 35 (9), 095009, 2020
52020
Hertog M den, Dang LS, Monroy E and Songmuang R 2014 Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission
C Himwas
Appl. Phys. Lett 105, 241908, 0
5
GaAs/GaAsPBi core–shell nanowires grown by molecular beam epitaxy
C Himwas, V Yordsri, C Thanachayanont, M Tchernycheva, S Panyakeow, ...
Nanotechnology 33 (9), 095602, 2021
32021
Preferential nucleation, guiding, and blocking of self-propelled droplets by dislocations
S Kanjanachuchai, T Wongpinij, S Kijamnajsuk, C Himwas, S Panyakeow, ...
Journal of Applied Physics 123 (16), 2018
32018
III-Nitride nanostructures for UV emitters
C Himwas
Université Grenoble Alpes, 2015
32015
III-V Nanowires on Silicon: a possible route to Si-based tandem solar cells
A Cattoni, A Scaccabarozzi, HL Chen, C Himwas, F Oehler, G Patriarche, ...
Optical Nanostructures and Advanced Materials for Photovoltaics, PM3A. 2, 2017
22017
Cathodoluminescence characterization of semiconductor doping at the nanoscale
HL Chen, A Scaccabarozzi, R De Lépinau, C Himwas, P Rale, F Oehler, ...
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A …, 2018
12018
Nanostructures à base de semi-conducteurs nitrures pour l'émission ultraviolette
C Himwas
Université Grenoble Alpes (ComUE), 2015
12015
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