| High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers SS Mikhrin, AR Kovsh, IL Krestnikov, AV Kozhukhov, DA Livshits, ... Semiconductor science and technology 20 (5), 340, 2005 | 196 | 2005 |
| 6-mW single-mode high-speed 1550-nm wafer-fused VCSELs for DWDM application AV Babichev, LY Karachinsky, II Novikov, AG Gladyshev, SA Blokhin, ... IEEE Journal of Quantum Electronics 53 (6), 1-8, 2017 | 68 | 2017 |
| MBE-grown metamorphic lasers for applications at telecom wavelengths NN Ledentsov, VA Shchukin, T Kettler, K Posilovic, D Bimberg, ... Journal of crystal growth 301, 914-922, 2007 | 66 | 2007 |
| Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots SA Blokhin, NA Maleev, AG Kuzmenkov, AV Sakharov, MM Kulagina, ... IEEE journal of quantum electronics 42 (9), 851-858, 2006 | 59 | 2006 |
| High-power single mode (> 1W) continuous wave operation of longitudinal photonic band crystal lasers with a narrow vertical beam divergence II Novikov, NY Gordeev, YM Shernyakov, YY Kiselev, MV Maximov, ... Applied Physics Letters 92 (10), 2008 | 58 | 2008 |
| A 1.33 µm InAs/GaAs quantum dot laser with a 46 cm− 1 modal gain MV Maximov, VM Ustinov, AE Zhukov, NV Kryzhanovskaya, AS Payusov, ... Semiconductor science and technology 23 (10), 105004, 2008 | 54 | 2008 |
| Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 μm AV Babichev, AG Gladyshev, AV Filimonov, VN Nevedomskii, ... Technical Physics Letters 43, 666-669, 2017 | 49 | 2017 |
| Metamorphic 1.5 µm-range quantum dot lasers on a GaAs substrate LY Karachinsky, T Kettler, II Novikov, YM Shernyakov, NY Gordeev, ... Semiconductor science and technology 21 (5), 691, 2006 | 47 | 2006 |
| High-power singlemode CW operation of 1.5 µm-range quantum dot GaAs-based laser LY Karachinsky, T Kettler, NY Gordeev, II Novikov, MV Maximov, ... Electronics Letters 41 (8), 1, 2005 | 43 | 2005 |
| High-power low-beam divergence edge-emitting semiconductor lasers with 1-and 2-D photonic bandgap crystal waveguide MV Maximov, YM Shernyakov, II Novikov, LY Karachinsky, NY Gordeev, ... IEEE Journal of Selected Topics in Quantum Electronics 14 (4), 1113-1122, 2008 | 42 | 2008 |
| High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence MV Maximov, YM Shernyakov, II Novikov, SM Kuznetsov, LY Karachinsky, ... IEEE journal of quantum electronics 41 (11), 1341-1348, 2005 | 41 | 2005 |
| High-power high-brightness semiconductor lasers based on novel waveguide concepts D Bimberg, K Posilovic, V Kalosha, T Kettler, D Seidlitz, VA Shchukin, ... Novel In-Plane Semiconductor Lasers IX 7616, 321-334, 2010 | 40 | 2010 |
| Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers II Novikov, NY Gordeev, LY Karachinskii, MV Maksimov, YM Shernyakov, ... Semiconductors 39, 477-480, 2005 | 40 | 2005 |
| High-power 1.3 μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system A Wilk, AR Kovsh, SS Mikhrin, C Chaix, II Novikov, MV Maximov, ... Journal of crystal growth 278 (1-4), 335-341, 2005 | 38 | 2005 |
| Wavelength-stabilized tilted cavity quantum dot laser NN Ledentsov, VA Shchukin, SS Mikhrin, IL Krestnikov, AV Kozhukhov, ... Semiconductor science and technology 19 (10), 1183, 2004 | 37 | 2004 |
| High power single mode 1300-nm superlattice based VCSEL: Impact of the buried tunnel junction diameter on performance SA Blokhin, AV Babichev, AG Gladyshev, LY Karachinsky, II Novikov, ... IEEE Journal of Quantum Electronics 58 (2), 1-15, 2022 | 35 | 2022 |
| High-power (> 1 W) room-temperature quantum-cascade lasers for the long-wavelength IR region VV Dudelev, DA Mikhailov, AV Babichev, AD Andreev, SN Losev, ... Quantum Electronics 50 (2), 141, 2020 | 34 | 2020 |
| Tilted wave lasers: A way to high brightness sources of light V Shchukin, N Ledentsov, K Posilovic, V Kalosha, T Kettler, D Seidlitz, ... IEEE Journal of Quantum Electronics 47 (7), 1014-1027, 2011 | 34 | 2011 |
| Long-wavelength VCSELs: status and prospects A Babichev, S Blokhin, E Kolodeznyi, L Karachinsky, I Novikov, A Egorov, ... Photonics 10 (3), 268, 2023 | 33 | 2023 |
| Reliability performance of 25 Gbit s− 1 850 nm vertical-cavity surface-emitting lasers LY Karachinsky, SA Blokhin, II Novikov, NA Maleev, AG Kuzmenkov, ... Semiconductor science and technology 28 (6), 065010, 2013 | 33 | 2013 |
Leonid KarachinskyConnector Optics LLC, ITMO UniversityBestätigte E-Mail-Adresse bei connector-optics.com
