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Patrick Harvey-Collard
Patrick Harvey-Collard
IBM Research Europe - Zurich
Bestätigte E-Mail-Adresse bei zurich.ibm.com
Titel
Zitiert von
Zitiert von
Jahr
High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
P Harvey-Collard, B D’Anjou, M Rudolph, NT Jacobson, J Dominguez, ...
Physical Review X 8 (2), 021046, 2018
1332018
A silicon metal-oxide-semiconductor electron spin-orbit qubit
RM Jock, NT Jacobson, P Harvey-Collard, AM Mounce, V Srinivasa, ...
Nature communications 9 (1), 1768, 2018
1242018
Coherent coupling between a quantum dot and a donor in silicon
P Harvey-Collard, NT Jacobson, M Rudolph, J Dominguez, GA Ten Eyck, ...
Nature Communications 8 (1), 1029, 2017
1122017
Coherent spin-spin coupling mediated by virtual microwave photons
P Harvey-Collard, J Dijkema, G Zheng, A Sammak, G Scappucci, ...
Physical Review X 12 (2), 021026, 2022
782022
Valley splitting of single-electron Si MOS quantum dots
JK Gamble, P Harvey-Collard, NT Jacobson, AD Baczewski, E Nielsen, ...
Applied Physics Letters 109 (25), 2016
732016
Spin-orbit interactions for singlet-triplet qubits in silicon
P Harvey-Collard, NT Jacobson, C Bureau-Oxton, RM Jock, V Srinivasa, ...
Physical Review Letters 122, 217702, 2019
542019
On the relationship between snow grain morphology and in-situ near infrared calibrated reflectance photographs
A Langlois, A Royer, B Montpetit, G Picard, L Brucker, L Arnaud, ...
Cold Regions Science and Technology 61 (1), 34-42, 2010
512010
A 6-to-8GHz 0.17 mW/qubit cryo-CMOS receiver for multiple spin qubit readout in 40nm CMOS technology
B Prabowo, G Zheng, M Mehrpoo, B Patra, P Harvey-Collard, J Dijkema, ...
2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 212-214, 2021
362021
On-Chip Microwave Filters for High-Impedance Resonators with Gate-Defined Quantum Dots
P Harvey-Collard, G Zheng, J Dijkema, N Samkharadze, A Sammak, ...
Physical Review Applied 14 (3), 034025, 2020
332020
All-electrical universal control of a double quantum dot qubit in silicon MOS
P Harvey-Collard, RM Jock, NT Jacobson, AD Baczewski, AM Mounce, ...
Electron Devices Meeting (IEDM), 2017 IEEE International, 36.5.1-36.5.4, 2017
22*2017
Single-shot readout performance of two heterojunction-bipolar-transistor amplification circuits at millikelvin temperatures
MJ Curry, M Rudolph, TD England, AM Mounce, RM Jock, ...
Scientific Reports 9 (1), 16976, 2019
212019
Coupling MOS quantum dot and phosphorous donor qubit systems
M Rudolph, P Harvey-Collard, R Jock, T Jacobson, J Wendt, T Pluym, ...
Electron Devices Meeting (IEDM), 2016 IEEE International, 34.1. 1-34.1. 4, 2016
202016
Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry
P Harvey-Collard, A Jaouad, D Drouin, M Pioro-Ladrière
Microelectronic Engineering 110 (Supplement C), 408-413, 2013
162013
Probing the Jaynes-Cummings ladder with spin circuit quantum electrodynamics
T Bonsen, P Harvey-Collard, M Russ, J Dijkema, A Sammak, G Scappucci, ...
Physical review letters 130 (13), 137001, 2023
102023
Spin-orbit qubit using quantum dots
RM Jock, M Rudolph, AD Baczewski, W Witzel, MS Carroll, ...
US Patent 10,482,388, 2019
82019
A silicon nanocrystal tunnel field effect transistor
P Harvey-Collard, D Drouin, M Pioro-Ladriere
Applied Physics Letters 104 (19), 2014
82014
A fabrication process for emerging nanoelectronic devices based on oxide tunnel junctions
D Drouin, G Droulers, M Labalette, B Lee Sang, P Harvey-Collard, ...
Journal of Nanomaterials 2017, 2017
72017
Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures
L Massai, B Hetényi, M Mergenthaler, FJ Schupp, L Sommer, S Paredes, ...
arXiv preprint arXiv:2310.05902, 2023
62023
Two-qubit logic between distant spins in silicon
J Dijkema, X Xue, P Harvey-Collard, M Rimbach-Russ, SL de Snoo, ...
arXiv preprint arXiv:2310.16805, 2023
22023
Spin Qubits in Silicon FinFET Devices
A Fuhrer, M Aldeghi, T Berger, LC Camenzind, RS Eggli, S Geyer, ...
2022 International Electron Devices Meeting (IEDM), 14.1. 1-14.1. 4, 2022
12022
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