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Abdelkader Souifi
Abdelkader Souifi
INSA Lyon - Laboratoires Ampere et LTM @ CEA - Grenoble
Bestätigte E-Mail-Adresse bei insa-lyon.fr
Titel
Zitiert von
Zitiert von
Jahr
Novel integration process and performances analysis of Low STandby Power (LSTP) 3D Multi-Channel CMOSFET (MCFET) on SOI with Metal/High-K Gate stack
E Bernard, T Ernst, B Guillaumot, N Vulliet, V Barral, V Maffini-Alvaro, ...
2008 Symposium on VLSI Technology, 16-17, 2008
2362008
Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications
M Kanoun, A Souifi, T Baron, F Mazen
Applied Physics Letters 84 (25), 5079-5081, 2004
1582004
Excitonic photoluminescence from Si-capped strained layers
D Dutartre, G Brémond, A Souifi, T Benyattou
Physical Review B 44 (20), 11525, 1991
1311991
Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication
S Decossas, F Mazen, T Baron, G Brémond, A Souifi
Nanotechnology 14 (12), 1272, 2003
1072003
Electronic properties of Ge nanocrystals for non volatile memory applications
M Kanoun, C Busseret, A Poncet, A Souifi, T Baron, E Gautier
Solid-State Electronics 50 (7-8), 1310-1314, 2006
952006
Optical and electrical properties of Si-nanocrystals ion beam synthesized in SiO2
B Garrido, M López, A Pérez-Rodrıguez, C Garcıa, P Pellegrino, R Ferré, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
882004
Optical properties of silicon nanocrystal LEDs
J De La Torre, A Souifi, A Poncet, C Busseret, M Lemiti, G Bremond, ...
Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 326-330, 2003
812003
Study of trapping phenomenon in 4H-SiC MESFETs: dependence on substrate purity
N Sghaier, JM Bluet, A Souifi, G Guillot, E Morvan, C Brylinski
IEEE Transactions on Electron Devices 50 (2), 297-302, 2003
672003
Discharge mechanisms modeling in LPCVD silicon nanocrystals usingC–Vand capacitance transient techniques
C Busseret, A Souifi, T Baron, G Guillot, F Martin, MN Semeria, J Gautier
Superlattices and Microstructures 28 (5-6), 493-500, 2000
642000
Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices
T Baron, F Martin, P Mur, C Wyon, M Dupuy, C Busseret, A Souifi, ...
Applied surface science 164 (1-4), 29-34, 2000
632000
pH driven addressing of silicon nanowires onto Si3N4/SiO2 micro-patterned surfaces
JP Cloarec, C Chevalier, J Genest, J Beauvais, H Chamas, Y Chevolot, ...
Nanotechnology 27 (29), 295602, 2016
622016
Nucleation control of CVD growth silicon nanocrystals for quantum devices
T Baron, F Mazen, C Busseret, A Souifi, P Mur, F Fournel, MN Séméria, ...
Microelectronic engineering 61, 511-515, 2002
542002
Electrical and optical characterisation of vanadium in 4H and 6H–SiC
V Lauer, G Brémond, A Souifi, G Guillot, K Chourou, M Anikin, R Madar, ...
Materials Science and Engineering: B 61, 248-252, 1999
471999
Photoluminescence and electrical characterization of SiGe/Si heterostructures grown by rapid thermal chemical vapour deposition
G Bremond, A Souifi, T Benyattou, D Dutartre
Thin Solid Films 222 (1-2), 60-68, 1992
441992
Thermal hole emission from Si/Si1−xGex/Si quantum wells by deep level transient spectroscopy
O Chretien, R Apetz, L Vescan, A Souifi, H Lüth, K Schmalz, JJ Koulmann
Journal of applied physics 78 (9), 5439-5447, 1995
381995
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates
N Sghaier, M Trabelsi, N Yacoubi, JM Bluet, A Souifi, G Guillot, ...
Microelectronics Journal 37 (4), 363-370, 2006
362006
Work function tuning through dopant scanning and related effects in Ni fully silicided gate for sub-45nm nodes CMOS
D Aime, B Froment, F Cacho, V Carron, S Descombes, Y Morand, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 87-90, 2004
362004
Optimized pre-treatment process for MOS-GaN devices passivation
A Chakroun, H Maher, E Al Alam, A Souifi, V Aimez, R Arès, A Jaouad
IEEE Electron Device Letters 35 (3), 318-320, 2014
352014
Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics
S Hlali, N Hizem, L Militaru, A Kalboussi, A Souifi
Microelectronics reliability 75, 154-161, 2017
322017
Ion-induced tracks in amorphous Si3N4 films
B Canut, A Ayari, K Kaja, AL Deman, M Lemiti, A Fave, A Souifi, S Ramos
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008
322008
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