Metal–Semiconductor–Metal ε-Ga2 O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism Y Qin, L Li, X Zhao, GS Tompa, H Dong, G Jian, Q He, P Tan, X Hou, ...
Acs Photonics 7 (3), 812-820, 2020
176 2020 Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications X Hou, Y Zou, M Ding, Y Qin, Z Zhang, X Ma, P Tan, S Yu, X Zhou, X Zhao, ...
Journal of Physics D: Applied Physics 54 (4), 043001, 2020
138 2020 High‐Performance Harsh‐Environment‐Resistant GaOX Solar‐Blind Photodetectors via Defect and Doping Engineering X Hou, X Zhao, Y Zhang, Z Zhang, Y Liu, Y Qin, P Tan, C Chen, S Yu, ...
Advanced Materials 34 (1), 2106923, 2022
137 2022 Review of deep ultraviolet photodetector based on gallium oxide Y Qin, S Long, H Dong, Q He, G Jian, Y Zhang, X Hou, P Tan, Z Zhang, ...
Chinese Physics B 28 (1), 018501, 2019
112 2019 Ultra‐High Performance Amorphous Ga2 O3 Photodetector Arrays for Solar‐Blind Imaging Y Qin, LH Li, Z Yu, F Wu, D Dong, W Guo, Z Zhang, JH Yuan, KH Xue, ...
Advanced Science 8 (20), 2101106, 2021
110 2021 Amorphous gallium oxide‐based gate‐tunable high‐performance thin film phototransistor for solar‐blind imaging Y Qin, S Long, Q He, H Dong, G Jian, Y Zhang, X Hou, P Tan, Z Zhang, ...
Advanced Electronic Materials 5 (7), 1900389, 2019
104 2019 High-Performance Metal-Organic Chemical Vapor Deposition Grown 2 O3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes Y Qin, H Sun, S Long, GS Tompa, T Salagaj, H Dong, Q He, G Jian, Q Liu, ...
IEEE Electron Device Letters 40 (9), 1475-1478, 2019
103 2019 Schottky Barrier Rectifier Based on (100)2 O3 and its DC and AC Characteristics Q He, W Mu, B Fu, Z Jia, S Long, Z Yu, Z Yao, W Wang, H Dong, Y Qin, ...
IEEE Electron Device Letters 39 (4), 556-559, 2018
69 2018 Ultrahigh-Performance Solar-Blind Photodetector Based on 2 O3 Film With Record Low Dark Current of 81 fA X Hou, H Sun, S Long, GS Tompa, T Salagaj, Y Qin, Z Zhang, P Tan, S Yu, ...
IEEE Electron Device Letters 40 (9), 1483-1486, 2019
65 2019 Enhancement-Mode 2 O3 Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio Y Qin, H Dong, S Long, Q He, G Jian, Y Zhang, X Zhou, Y Yu, X Hou, ...
IEEE Electron Device Letters 40 (5), 742-745, 2019
62 2019 Characterization of the inhomogeneous barrier distribution in a Pt/(100) β-Ga2O3 Schottky diode via its temperature-dependent electrical properties G Jian, Q He, W Mu, B Fu, H Dong, Y Qin, Y Zhang, H Xue, S Long, Z Jia, ...
AIP Advances 8 (1), 2018
57 2018 2.5 kV Vertical Ga2 O3 Schottky Rectifier With Graded Junction Termination Extension B Wang, M Xiao, J Spencer, Y Qin, K Sasaki, MJ Tadjer, Y Zhang
IEEE Electron Device Letters 44 (2), 221-224, 2022
53 2022 Fast Switching 2 O3 Power MOSFET With a Trench-Gate Structure H Dong, S Long, H Sun, X Zhao, Q He, Y Qin, G Jian, X Zhou, Y Yu, ...
IEEE Electron Device Letters 40 (9), 1385-1388, 2019
52 2019 Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material H Dong, H Xue, Q He, Y Qin, G Jian, S Long, M Liu
Journal of Semiconductors 40 (1), 011802, 2019
50 2019 CV and JV investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3 H Dong, W Mu, Y Hu, Q He, B Fu, H Xue, Y Qin, G Jian, Y Zhang, S Long, ...
AIP Advances 8 (6), 2018
44 2018 Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective Y Qin, B Albano, J Spencer, JS Lundh, B Wang, C Buttay, M Tadjer, ...
Journal of Physics D: Applied Physics 56 (9), 093001, 2023
33 2023 Recent progress of Ga2O3 power technology: large-area devices, packaging and applications Y Qin, Z Wang, K Sasaki, J Ye, Y Zhang
Japanese Journal of Applied Physics 62 (SF), SF0801, 2023
33 2023 Facile synthesis and photocatalytic performance of Mg2 SnO4 /SnO2 heterostructures Y Qin, J Xiong, W Zhang, L Liu, Y Cui, H Gu
Journal of materials science 50, 5865-5872, 2015
29 2015 Artificial neuronal devices based on emerging materials: neuronal dynamics and applications H Liu, Y Qin, HY Chen, J Wu, J Ma, Z Du, N Wang, J Zou, S Lin, X Zhang, ...
Advanced Materials 35 (37), 2205047, 2023
21 2023 10 kV Ga2 O3 Charge-Balance Schottky Rectifier Operational at 200 °C Y Qin, M Xiao, M Porter, Y Ma, J Spencer, Z Du, AG Jacobs, K Sasaki, ...
IEEE Electron Device Letters, 2023
18 2023 
Yuhao ZhangCPES, Virginia TechBestätigte E-Mail-Adresse bei vt.edu
