Optical absorption edge of semi-insulating GaAs and InP at high temperatures M Beaudoin, AJG DeVries, SR Johnson, H Laman, T Tiedje
Applied Physics Letters 70 (26), 3540-3542, 1997
228 1997 High-performance 1.6 µm single-epitaxy topemitting VCSEL W Yuen, GS Li, RF Nabiev, J Boucart, P Kner, RJ Stone, D Zhang, ...
Electronics Letters 36 (13), 1, 2000
173 2000 Self-consistent determination of the band offsets in M Beaudoin, A Bensaada, R Leonelli, P Desjardins, RA Masut, L Isnard, ...
Physical Review B 53 (4), 1990, 1996
67 1996 Long wavelength MEMS tunable VCSEL with InP-InAlGaAs bottom DBR J Boucart, R Pathak, D Zhang, M Beaudoin, P Kner, D Sun, RJ Stone, ...
IEEE Photonics Technology Letters 15 (9), 1186-1188, 2003
48 2003 Blueshift of the optical band gap: Implications for the quantum confinement effect in a -Si:H/a - M Beaudoin, M Meunier, CJ Arsenault
Physical Review B 47 (4), 2197, 1993
47 1993 Z Salman, AI Mansour, KH Chow, M Beaudoin, I Fan, J Jung, TA Keeler, ...
Physical Review B—Condensed Matter and Materials Physics 75 (7), 073405, 2007
43 2007 Flexible High‐Performance Photovoltaic Devices based on 2D MoS2 Diodes with Geometrically Asymmetric Contact Areas A Abnavi, R Ahmadi, H Ghanbari, M Fawzy, A Hasani, T De Silva, ...
Advanced Functional Materials 33 (7), 2210619, 2023
34 2023 Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy RYF Yip, A Aït-Ouali, A Bensaada, P Desjardins, M Beaudoin, L Isnard, ...
Journal of applied physics 81 (4), 1905-1915, 1997
22 1997 Structural and optical properties of strain‐relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP (001) using tertiarybutylarsine P Desjardins, M Beaudoin, R Leonelli, G L’Espérance, RA Masut
Journal of applied physics 80 (2), 846-852, 1996
20 1996 Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy M Beaudoin, RB Lewis, JJ Andrews, V Bahrami-Yekta, M Masnadi-Shirazi, ...
Journal of Crystal Growth 425, 245-249, 2015
16 2015 On the blue-shift of the optical bandgap of a-Si: H/a-SiNx: H multilayer structures M Beaudoin, CJ Arsenault, M Meunier
Journal of non-crystalline solids 137, 1099-1102, 1991
16 1991 Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x‐ray photoelectron spectroscopy M Beaudoin, CJ Arsenault, R Izquierdo, M Meunier
Applied physics letters 55 (25), 2640-2642, 1989
16 1989 Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy M Beaudoin, ICW Chan, D Beaton, M Elouneg-Jamroz, T Tiedje, ...
Journal of crystal growth 311 (7), 1662-1665, 2009
15 2009 Elimination of low frequency gain in InAlAs/InGaAs metal-semiconductor-metal photodetectors by silicon nitride passivation RG Decorby, RI Macdonald, M Beaudoin, T Pinnington, T Tiedje, F Gouin
Journal of Electronic Materials 26, L25-L28, 1997
10 1997 Electronic transport through a-Si: H/a-SiNx: H single and double barrier structures CJ Arsenault, M Meunier, M Beaudoin, B Movaghar
Journal of non-crystalline solids 137, 1111-1114, 1991
10 1991 Evidence for deep centers in n-InP grown by MOVPE M Benzaquen, D Walsh, M Beaudoin, K Mazuruk, N Puetz
Journal of Crystal Growth 93 (1-4), 562-568, 1988
10 1988 Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs SR Johnson, P Dowd, W Braun, U Koelle, CM Ryu, M Beaudoin, CZ Guo, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
9 2000 Perpendicular transport in a -Si:H/a - CJ Arsenault, M Meunier, M Beaudoin, B Movaghar
Physical Review B 44 (20), 11521, 1991
9 1991 Anomalous electrical behavior of n-type InP M Benzaquen, M Beaudoin, D Walsh, N Puetz
Physical Review B 38 (11), 7824, 1988
9 1988 Film thickness and composition monitoring during growth by molecular beam epitaxy using alpha particle energy loss M Beaudoin, M Adamcyk, Z Gelbart, U Giesen, I Kelson, Y Levy, ...
Applied physics letters 72 (25), 3288-3290, 1998
8 1998 
Thomas TiedjeElectrical and Computer Engineering, University of Victoria, Victoria, BCBestätigte E-Mail-Adresse bei uvic.ca
