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Keji Lai
Keji Lai
Bestätigte E-Mail-Adresse bei physics.utexas.edu
Titel
Zitiert von
Zitiert von
Jahr
Aharonov–Bohm interference in topological insulator nanoribbons
H Peng, K Lai, D Kong, S Meister, Y Chen, XL Qi, SC Zhang, ZX Shen, ...
Nature materials 9 (3), 225-229, 2010
9732010
Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes
Y Zhou, D Wu, Y Zhu, Y Cho, Q He, X Yang, K Herrera, Z Chu, Y Han, ...
Nano letters 17 (9), 5508-5513, 2017
6842017
Toward air-stable multilayer phosphorene thin-films and transistors
JS Kim, Y Liu, W Zhu, S Kim, D Wu, L Tao, A Dodabalapur, K Lai, ...
Nature Scientific Reports, Volume 5, 8989 (2015), 2014
4452014
Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning
D Kong, Y Chen, JJ Cha, Q Zhang, JG Analytis, K Lai, Z Liu, SS Hong, ...
Nature nanotechnology 6 (11), 705-709, 2011
4322011
Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3
D Kong, JJ Cha, K Lai, H Peng, JG Analytis, S Meister, Y Chen, HJ Zhang, ...
ACS nano 5 (6), 4698-4703, 2011
4102011
Topological insulator nanowires and nanoribbons
D Kong, JC Randel, H Peng, JJ Cha, S Meister, K Lai, Y Chen, ZX Shen, ...
Nano letters 10 (1), 329-333, 2010
3882010
Impact of grain boundaries on efficiency and stability of organic-inorganic trihalide perovskites
Z Chu, M Yang, P Schulz, D Wu, X Ma, E Seifert, L Sun, X Li, K Zhu, K Lai
Nature communications 8 (1), 2230, 2017
2772017
Mesoscopic percolating resistance network in a strained manganite thin film
K Lai, M Nakamura, W Kundhikanjana, M Kawasaki, Y Tokura, MA Kelly, ...
Science 329 (5988), 190-193, 2010
2342010
Ultrathin Topological Insulator Bi2Se3 Nanoribbons Exfoliated by Atomic Force Microscopy
SS Hong, W Kundhikanjana, JJ Cha, K Lai, D Kong, S Meister, MA Kelly, ...
Nano letters 10 (8), 3118-3122, 2010
2102010
Microwave-to-optical conversion using lithium niobate thin-film acoustic resonators
L Shao, M Yu, S Maity, N Sinclair, L Zheng, C Chia, A Shams-Ansari, ...
Optica 6 (12), 1498-1505, 2019
2092019
Weak Antilocalization in Bi2(SexTe1–x)3 Nanoribbons and Nanoplates
JJ Cha, D Kong, SS Hong, JG Analytis, K Lai, Y Cui
Nano letters 12 (2), 1107-1111, 2012
2022012
A native oxide high-κ gate dielectric for two-dimensional electronics
T Li, T Tu, Y Sun, H Fu, J Yu, L Xing, Z Wang, H Wang, R Jia, J Wu, C Tan, ...
Nature Electronics 3 (8), 473-478, 2020
1892020
Modeling and characterization of a cantilever-based near-field scanning microwave impedance microscope
K Lai, W Kundhikanjana, M Kelly, ZX Shen
Review of scientific instruments 79 (6), 2008
1882008
Phonon renormalization in reconstructed MoS2 moiré superlattices
J Quan, L Linhart, ML Lin, D Lee, J Zhu, CY Wang, WT Hsu, J Choi, ...
Nature materials 20 (8), 1100-1105, 2021
1462021
Atomic-force-microscope-compatible near-field scanning microwave microscope with separated excitation and sensing probes
K Lai, MB Ji, N Leindecker, MA Kelly, ZX Shen
Review of scientific instruments 78 (6), 2007
1412007
Coherent acoustic control of a single silicon vacancy spin in diamond
S Maity, L Shao, S Bogdanović, S Meesala, YI Sohn, N Sinclair, ...
Nature communications 11 (1), 193, 2020
1392020
Unexpected edge conduction in mercury telluride quantum wells under broken time-reversal symmetry
EY Ma, MR Calvo, J Wang, B Lian, M Mühlbauer, C Brüne, YT Cui, K Lai, ...
Nature communications 6 (1), 7252, 2015
1352015
Thickness-Dependent Dielectric Constant of Few-Layer In2Se3 Nanoflakes
D Wu, AJ Pak, Y Liu, Y Zhou, X Wu, Y Zhu, M Lin, Y Han, Y Ren, H Peng, ...
Nano letters 15 (12), 8136-8140, 2015
1242015
Evidence for a higher-order topological insulator in a three-dimensional material built from van der Waals stacking of bismuth-halide chains
R Noguchi, M Kobayashi, Z Jiang, K Kuroda, T Takahashi, Z Xu, D Lee, ...
Nature Materials 20 (4), 473-479, 2021
1232021
Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors
D Wu, X Li, L Luan, X Wu, W Li, MN Yogeesh, R Ghosh, Z Chu, ...
Proceedings of the National Academy of Sciences 113 (31), 8583-8588, 2016
1232016
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