Folgen
Andrew Ritenour
Andrew Ritenour
Assistant Professor, Western Carolina University
Bestätigte E-Mail-Adresse bei wcu.edu
Titel
Zitiert von
Zitiert von
Jahr
Flexible active-matrix electronic ink display
Y Chen, J Au, P Kazlas, A Ritenour, H Gates, M McCreary
Nature 423 (6936), 136-136, 2003
7412003
Backplanes for display applications, and components for use therein
KR Amundson, Y Chen, KL Denis, PS Drzaic, PT Kazlas, AP Ritenour
US Patent 7,116,318, 2006
5702006
Method for forming an interface between germanium and other materials
A Ritenour
US Patent App. 11/251,089, 2006
4052006
Processes for forming backplanes for electro-optic displays
PT Kazlas, NR Kane, AP Ritenour
US Patent 7,223,672, 2007
2842007
Electro-optic displays, and components for use therein
KR Amundson, AP Ritenour, GM Duthaler, PS Drzaic, Y Chen, PT Kazlas
US Patent 7,190,008, 2007
2132007
Backplanes for display applications, and components for use therein
KR Amundson, Y Chen, KL Denis, PS Drzaic, PT Kazlas, AP Ritenour
US Patent 7,605,799, 2009
1932009
Epitaxial strained germanium p-MOSFETs with HfO 2 gate dielectric and TaN gate electrode
A Ritenour, S Yu, ML Lee, N Lu, W Bai, A Pitera, EA Fitzgerald, DL Kwong, ...
Technical Digest-International Electron Devices Meeting, 433-436, 2003
1922003
Processes for forming backplanes for electro-optic displays
KR Amundson, GM Danner, GM Duthaler, PT Kazlas, Y Chen, KL Denis, ...
US Patent 7,442,587, 2008
1742008
Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric
N Lu, W Bai, A Ramirez, C Mouli, A Ritenour, ML Lee, D Antoniadis, ...
Applied Physics Letters 87 (5), 2005
1632005
Electro-optic displays, and components for use therein
AP Ritenour, GM Duthaler
US Patent 7,598,173, 2009
1292009
Ge MOS characteristics with CVD HfO/sub 2/gate dielectrics and TaN gate electrode
WP Bai, N Lu, J Liu, A Ramirez, DL Kwong, D Wristers, A Ritenour, L Lee, ...
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003
1242003
Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks
KH Kim, RG Gordon, A Ritenour, DA Antoniadis
Applied physics letters 90 (21), 2007
932007
Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack
A Ritenour, A Khakifirooz, DA Antoniadis, RZ Lei, W Tsai, A Dimoulas, ...
Applied physics letters 88 (13), 2006
852006
Processes for forming backplanes for electro-optic displays
KR Amundson, GM Danner, GM Duthaler, PT Kazlas, Y Chen, KL Denis, ...
US Patent 7,785,988, 2010
772010
Ge n-mosfets on lightly doped substrates with high-/spl kappa/dielectric and tan gate
WP Bai, N Lu, A Ritenour, ML Lee, DA Antoniadis, DL Kwong
IEEE electron device letters 27 (3), 175-178, 2006
732006
Improved two-stage DC-coupled gate driver for enhancement-mode SiC JFET
R Kelley, A Ritenour, D Sheridan, J Casady
2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and …, 2010
702010
Processes for forming backplanes for electro-optic displays
KR Amundson, GM Danner, GM Duthaler, PT Kazlas, Y Chen, KL Denis, ...
US Patent 8,389,381, 2013
602013
Electro-optic displays, and components for use therein
KR Amundson, AP Ritenour, GM Duthaler, PS Drzaic, Y Chen, PT Kazlas
US Patent App. 12/552,334, 2009
602009
Record 2.8mΩ-cm21.9kV enhancement-mode SiC VJFETs
DC Sheridan, A Ritenour, V Bondarenko, P Burks, JB Casady
2009 21st International Symposium on Power Semiconductor Devices & IC's, 335-338, 2009
592009
Ultra-low loss 600V-1200V GaN power transistors for high efficiency applications
DC Sheridan, DY Lee, A Ritenour, V Bondarenko, J Yang, C Coleman
PCIM Europe 2014; International Exhibition and Conference for Power …, 2014
472014
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20