Andrea Scaccabarozzi
Andrea Scaccabarozzi
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Zitiert von
Zitiert von
Measuring and modeling the growth dynamics of self-catalyzed GaP nanowire arrays
F Oehler, A Cattoni, A Scaccabarozzi, G Patriarche, F Glas, JC Harmand
Nano letters 18 (2), 701-708, 2018
Formation of stable Si–O–C submonolayers on hydrogen-terminated silicon (111) under low-temperature conditions
YL Khung, SH Ngalim, A Scaccabarozzi, D Narducci
Beilstein journal of nanotechnology 6 (1), 19-26, 2015
Determination of n-type doping level in single GaAs nanowires by cathodoluminescence
HL Chen, C Himwas, A Scaccabarozzi, P Rale, F Oehler, A Lemaître, ...
Nano letters 17 (11), 6667-6675, 2017
Evidence of two‐photon absorption in strain‐free quantum dot GaAs/AlGaAs solar cells
A Scaccabarozzi, S Adorno, S Bietti, M Acciarri, S Sanguinetti
physica status solidi (RRL)–Rapid Research Letters 7 (3), 173-176, 2013
Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Si
M Salvalaglio, R Bergamaschini, F Isa, A Scaccabarozzi, G Isella, ...
ACS applied materials & interfaces 7 (34), 19219-19225, 2015
Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale
S Bietti, A Scaccabarozzi, C Frigeri, M Bollani, E Bonera, CV Falub, ...
Applied Physics Letters 103 (26), 2013
Solar photovoltaics: a review
AL Donne, A Scaccabarozzi, S Tombolato, S Binetti, M Acciarri, A Abbotto
Reviews in Advanced Sciences and Engineering 2 (3), 170-178, 2013
Growth optimization and characterization of regular arrays of GaAs/AlGaAs core/shell nanowires for tandem solar cells on silicon
M Vettori, V Piazza, A Cattoni, A Scaccabarozzi, G Patriarche, P Regreny, ...
Nanotechnology 30 (8), 084005, 2018
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001)
A Marzegalli, A Cortinovis, FB Basset, E Bonera, F Pezzoli, ...
Materials & Design 116, 144-151, 2017
Self-assembly of quantum dot-disk nanostructures via growth kinetics control
C Somaschini, S Bietti, A Scaccabarozzi, E Grilli, S Sanguinetti
Crystal growth & design 12 (3), 1180-1184, 2012
GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers
A Ballabio, S Bietti, A Scaccabarozzi, L Esposito, S Vichi, A Fedorov, ...
Scientific reports 9 (1), 17529, 2019
Quantitative Assessment of Carrier Density by Cathodoluminescence. I. Thin Films and Modeling
HL Chen, A Scaccabarozzi, R De Lépinau, F Oehler, A Lemaître, ...
Physical Review Applied 15 (2), 024006, 2021
Kinetic growth mode of epitaxial GaAs on Si (001) micro-pillars
R Bergamaschini, S Bietti, A Castellano, C Frigeri, CV Falub, ...
Journal of Applied Physics 120 (24), 2016
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates
R Bergamaschini, M Salvalaglio, A Scaccabarozzi, F Isa, CV Falub, ...
Journal of Crystal Growth 440, 86-95, 2016
Stable and high yield growth of GaP and In 0.2 Ga 0.8 As nanowire arrays using In as a catalyst
A Scaccabarozzi, A Cattoni, G Patriarche, L Travers, S Collin, ...
Nanoscale 12 (35), 18240-18248, 2020
Integration of InGaP/GaAs/Ge triple‐junction solar cells on deeply patterned silicon substrates
A Scaccabarozzi, S Binetti, M Acciarri, G Isella, R Campesato, G Gori, ...
Progress in Photovoltaics: Research and Applications 24 (10), 1368-1377, 2016
Evidence and control of unintentional As-rich shells in GaAs1–xPx nanowires
R De Lépinau, A Scaccabarozzi, G Patriarche, L Travers, S Collin, ...
Nanotechnology 30 (29), 294003, 2019
GaAs/GaInP nanowire solar cell on Si with state-of-the-art V oc and quasi-Fermi level splitting
C Tong, A Delamarre, R De Lépinau, A Scaccabarozzi, F Oehler, ...
Nanoscale 14 (35), 12722-12735, 2022
State of the Art and perspectives of Inorganic Photovoltaics
A Le Donne, A Scaccabarozzi, S Tombolato, S Marchionna, P Garattini, ...
International Scholarly Research Notices 2013 (1), 830731, 2013
Quantitative Assessment of Carrier Density by Cathodoluminescence. II. Nanowires
HL Chen, R De Lépinau, A Scaccabarozzi, F Oehler, JC Harmand, ...
Physical Review Applied 15 (2), 024007, 2021
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