| Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric S Kim, J Nah, I Jo, D Shahrjerdi, L Colombo, Z Yao, E Tutuc, SK Banerjee Applied Physics Letters 94 (6), 2009 | 1338 | 2009 |
| Spalling methods to form multi-junction photovoltaic structure SW Bedell, DK Sadana, D Shahrjerdi US Patent 8,927,318, 2015 | 480 | 2015 |
| Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys B Hekmatshoar-Tabari, M Hopstaken, DG Park, DK Sadana, GG Shahidi, ... US Patent 9,099,585, 2015 | 457 | 2015 |
| Heterojunction III-V photovoltaic cell fabrication SW Bedell, NS Cortes, KE Fogel, D Sadana, G Shahidi, D Shahrjerdi US Patent 8,802,477, 2014 | 290 | 2014 |
| Low-temperature selective epitaxial growth of silicon for device integration B Hekmatshoar-Tabari, A Khakifirooz, A Reznicek, DK Sadana, ... US Patent App. 14/711,403, 2015 | 239 | 2015 |
| Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic D Shahrjerdi, SW Bedell Nano letters 13 (1), 315-320, 2013 | 226 | 2013 |
| Kerf-less removal of Si, Ge, and III–V layers by controlled spalling to enable low-cost PV technologies SW Bedell, D Shahrjerdi, B Hekmatshoar, K Fogel, PA Lauro, JA Ott, ... IEEE Journal of Photovoltaics 2 (2), 141-147, 2012 | 223 | 2012 |
| Quantitative principles for precise engineering of sensitivity in graphene electrochemical sensors T Wu, A Alharbi, R Kiani, D Shahrjerdi Advanced Materials 31 (6), 1805752, 2019 | 182 | 2019 |
| Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications K Cheng, A Khakifirooz, P Kulkarni, S Ponoth, J Kuss, D Shahrjerdi, ... 2009 IEEE international electron devices meeting (IEDM), 1-4, 2009 | 174 | 2009 |
| Variability in carbon nanotube transistors: Improving device-to-device consistency AD Franklin, GS Tulevski, SJ Han, D Shahrjerdi, Q Cao, HY Chen, ... ACS nano 6 (2), 1109-1115, 2012 | 147 | 2012 |
| Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography X Zheng, A Calò, E Albisetti, X Liu, ASM Alharbi, G Arefe, X Liu, M Spieser, ... Nature Electronics 2 (1), 17-25, 2019 | 146 | 2019 |
| Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric D Shahrjerdi, E Tutuc, SK Banerjee Applied Physics Letters 91 (6), 2007 | 143 | 2007 |
| Layer transfer by controlled spalling SW Bedell, K Fogel, P Lauro, D Shahrjerdi, JA Ott, D Sadana Journal of Physics D: Applied Physics 46 (15), 152002, 2013 | 136 | 2013 |
| High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology D Shahrjerdi, SW Bedell, C Ebert, C Bayram, B Hekmatshoar, K Fogel, ... Applied physics letters 100 (5), 2012 | 135 | 2012 |
| Functional simulation method J Weaver, T Gowrishankar, G Martin, D Stewart US Patent App. 10/011,920, 2002 | 113* | 2002 |
| Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization D Shahrjerdi, MM Oye, AL Holmes, SK Banerjee Applied physics letters 89 (4), 2006 | 108 | 2006 |
| How to report and benchmark emerging field-effect transistors Z Cheng, CS Pang, P Wang, ST Le, Y Wu, D Shahrjerdi, I Radu, ... Nature Electronics 5 (7), 416-423, 2022 | 106 | 2022 |
| Ultralight high-efficiency flexible InGaP/(In) GaAs tandem solar cells on plastic D Shahrjerdi, SW Bedell, C Bayram, CC Lubguban, K Fogel, P Lauro, ... Adv. Energy Mater 3 (5), 566-571, 2013 | 100 | 2013 |
| High-performance air-stable n-type carbon nanotube transistors with erbium contacts D Shahrjerdi, AD Franklin, S Oida, JA Ott, GS Tulevski, W Haensch ACS nano 7 (9), 8303-8308, 2013 | 88 | 2013 |
| A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems CC Hsieh, A Roy, YF Chang, D Shahrjerdi, SK Banerjee Applied Physics Letters 109 (22), 2016 | 78 | 2016 |
