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Perry C. Grant
Perry C. Grant
Arktonics LLC.
Bestätigte E-Mail-Adresse bei arktonics.com
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Zitiert von
Zitiert von
Jahr
Si-based GeSn photodetectors toward mid-infrared imaging applications
H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, ...
ACS Photonics 6 (11), 2807-2815, 2019
2122019
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ...
ACs Photonics 5 (3), 827-833, 2017
2072017
Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth
W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ...
Scientific reports 8 (1), 5640, 2018
1492018
High performance Ge0. 89Sn0. 11 photodiodes for low-cost shortwave infrared imaging
H Tran, T Pham, W Du, Y Zhang, PC Grant, JM Grant, G Sun, RA Soref, ...
Journal of Applied Physics 124 (1), 2018
802018
All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
J Margetis, Y Zhou, W Dou, PC Grant, B Alharthi, W Du, A Wadsworth, ...
Applied Physics Letters 113 (22), 2018
622018
UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
PC Grant, W Dou, B Alharthi, JM Grant, H Tran, G Abernathy, A Mosleh, ...
Optical Materials Express 9 (8), 3277-3291, 2019
432019
Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration
JA Steele, RA Lewis, M Henini, OM Lemine, D Fan, YI Mazur, ...
Optics express 22 (10), 11680-11689, 2014
382014
MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures
D Fan, PC Grant, SQ Yu, VG Dorogan, X Hu, Z Zeng, C Li, ME Hawkridge, ...
Journal of Vacuum Science & Technology B 31 (3), 2013
302013
Direct bandgap type-I GeSn/GeSn quantum well on a GeSn-and Ge-buffered Si substrate
PC Grant, J Margetis, Y Zhou, W Dou, G Abernathy, A Kuchuk, W Du, B Li, ...
AIP Advances 8 (2), 2018
292018
Crystalline GeSn growth by plasma enhanced chemical vapor deposition
W Dou, B Alharthi, PC Grant, JM Grant, A Mosleh, H Tran, W Du, ...
Optical Materials Express 8 (10), 3220-3229, 2018
282018
Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy
PC Grant, D Fan, A Mosleh, SQ Yu, VG Dorogan, ME Hawkridge, ...
Journal of Vacuum Science & Technology B 32 (2), 2014
242014
Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing
A Mosleh, M Alher, LC Cousar, W Du, SA Ghetmiri, S Al-Kabi, W Dou, ...
Journal of Electronic Materials 45, 2051-2058, 2016
212016
SiyGe1− x− ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system
A Mosleh, M Alher, W Du, LC Cousar, SA Ghetmiri, S Al-Kabi, W Dou, ...
Journal of Vacuum Science & Technology B 34 (1), 2016
212016
Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices
RA Carrasco, CP Morath, PC Grant, G Ariyawansa, CA Stephenson, ...
Journal of Applied Physics 129 (18), 2021
202021
Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement
PC Grant, J Margetis, W Du, Y Zhou, W Dou, G Abernathy, A Kuchuk, B Li, ...
Nanotechnology 29 (46), 465201, 2018
202018
Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics
G Abernathy, Y Zhou, S Ojo, B Alharthi, PC Grant, W Du, J Margetis, ...
Journal of Applied Physics 129 (9), 2021
162021
Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications
B Alharthi, W Dou, PC Grant, JM Grant, T Morgan, A Mosleh, W Du, B Li, ...
Applied Surface Science 481, 246-254, 2019
162019
Comparison study of the low temperature growth of dilute GeSn and Ge
PC Grant, W Dou, B Alharthi, JM Grant, A Mosleh, W Du, B Li, M Mortazavi, ...
Journal of Vacuum Science & Technology B 35 (6), 2017
162017
Heteroepitaxial growth of germanium-on-silicon using ultrahigh-vacuum chemical vapor deposition with RF plasma enhancement
B Alharthi, JM Grant, W Dou, PC Grant, A Mosleh, W Du, M Mortazavi, B Li, ...
Journal of Electronic Materials 47, 4561-4570, 2018
142018
Enhancement of material quality of (Si) GeSn films grown by SnCl4 precursor
A Mosleh, MA Alher, L Cousar, H Abusafe, W Dou, P Grant, S Al-Kabi, ...
ECS Transactions 69 (5), 279, 2015
132015
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