Shin-ichiro Sato
Shin-ichiro Sato
National Institutes for Quantum Science and Technology
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons
S Sato, H Miyamoto, M Imaizumi, K Shimazaki, C Morioka, K Kawano, ...
Solar energy materials and solar cells 93 (6-7), 768-773, 2009
Modeling of degradation behavior of InGaP/GaAs/Ge triple-junction space solar cell exposed to charged particles
S Sato, T Ohshima, M Imaizumi
Journal of Applied Physics 105 (4), 2009
Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface
S Castelletto, FA Inam, S Sato, A Boretti
Beilstein journal of nanotechnology 11 (1), 740-769, 2020
Enhanced charge collection by single ion strike in AlGaN/GaN HEMTs
S Onoda, A Hasuike, Y Nabeshima, H Sasaki, K Yajima, S Sato, ...
IEEE Transactions on Nuclear Science 60 (6), 4446-4450, 2013
Double negatively charged carbon vacancy at the h-and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study
I Capan, T Brodar, Ž Pastuović, R Siegele, T Ohshima, S Sato, T Makino, ...
Journal of applied physics 123 (16), 2018
First flight demonstration of film‐laminated InGaP/GaAs and CIGS thin‐film solar cells by JAXA's small satellite in LEO
C Morioka, K Shimazaki, S Kawakita, M Imaizumi, H Yamaguchi, ...
Progress in Photovoltaics: Research and Applications 19 (7), 825-833, 2011
Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties
S Sato, T Narahara, Y Abe, Y Hijikata, T Umeda, T Ohshima
Journal of Applied Physics 126 (8), 2019
Room temperature electrical control of single photon sources at 4H-SiC surface
S Sato, T Honda, T Makino, Y Hijikata, SY Lee, T Ohshima
ACS Photonics 5 (8), 3159-3165, 2018
Deep level defects in 4H-SiC introduced by ion implantation: The role of single ion regime
Ž Pastuović, R Siegele, I Capan, T Brodar, S Sato, T Ohshima
Journal of Physics: Condensed Matter 29 (47), 475701, 2017
Robust Hall effect magnetic field sensors for operation at high temperatures and in harsh radiation environments
A Abderrahmane, S Koide, SI Sato, T Ohshima, A Sandhu, H Okada
IEEE transactions on magnetics 48 (11), 4421-4423, 2012
Quantum-well solar cells for space: The impact of carrier removal on end-of-life device performance
R Hoheisel, M Gonzalez, MP Lumb, DA Scheiman, SR Messenger, ...
IEEE Journal of Photovoltaics 4 (1), 253-259, 2013
Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars
S Castelletto, AS Al Atem, FA Inam, HJ von Bardeleben, S Hameau, ...
Beilstein Journal of Nanotechnology 10 (1), 2383-2395, 2019
Charge multiplication effect in thin diamond films
N Skukan, V Grilj, I Sudić, M Pomorski, W Kada, T Makino, Y Kambayashi, ...
Applied physics letters 109 (4), 2016
Change in the electrical performance of GaAs solar cells with InGaAs quantum dot layers by electron irradiation
T Ohshima, S Sato, M Imaizumi, T Nakamura, T Sugaya, K Matsubara, ...
Solar energy materials and solar cells 108, 263-268, 2013
Change in I–V characteristics of subcells in a multi-junction solar cell due to radiation irradiation
T Nakamura, M Imaizumi, S Sato, T Ohshima
2012 38th IEEE Photovoltaic Specialists Conference, 002846-002850, 2012
In situ irradiation and measurement of triple junction solar cells at low intensity, low temperature (LILT) conditions
RD Harris, M Imaizumi, RJ Walters, JR Lorentzen, SR Messenger, ...
IEEE Transactions on Nuclear Science 55 (6), 3502-3507, 2008
Theoretical optimization of base doping concentration for radiation resistance of InGaP subcells of InGaP/GaAs/Ge based on minority-carrier lifetime
D Elfiky, M Yamaguchi, T Sasaki, T Takamoto, C Morioka, M Imaizumi, ...
Japanese Journal of Applied Physics 49 (12R), 121201, 2010
Fluorescent silicon carbide nanoparticles
MO De Vries, S Sato, T Ohshima, BC Gibson, JM Bluet, S Castelletto, ...
Advanced Optical Materials 9 (20), 2100311, 2021
Proton irradiation enhancement of low-field negative magnetoresistance sensitivity of AlGaN/GaN-based magnetic sensor at cryogenic temperature
A Abderrahmane, PJ Ko, H Okada, SI Sato, T Ohshima, A Sandhu
IEEE Electron Device Letters 35 (11), 1130-1132, 2014
Growth orientation dependent photoluminescence of GaAsN alloys
X Han, T Tanaka, N Kojima, Y Ohshita, M Yamaguchi, S Sato
Applied Physics Letters 100 (3), 2012
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