Evgeni Gusev
Evgeni Gusev
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Ultrathin (<4 nm) and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
ML Green, EP Gusev, R Degraeve, EL Garfunkel
Journal of Applied Physics 90 (5), 2057-2121, 2001
Structure and stability of ultrathin zirconium oxide layers on Si (001)
M Copel, M Gribelyuk, E Gusev
Applied Physics Letters 76 (4), 436-438, 2000
High-resolution depth profiling in ultrathin films on Si
EP Gusev, M Copel, E Cartier, IJR Baumvol, C Krug, MA Gribelyuk
Applied Physics Letters 76 (2), 176-178, 2000
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, ...
Microelectronic Engineering 59 (1-4), 341-349, 2001
High performance CMOS fabricated on hybrid substrate with different crystal orientations
M Yang, M Ieong, L Shi, K Chan, V Chan, A Chou, E Gusev, K Jenkins, ...
IEEE International Electron Devices Meeting 2003, 18.7. 1-18.7. 4, 2003
Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
EP Gusev, C Cabral Jr, M Copel, C D’emic, M Gribelyuk
Microelectronic Engineering 69 (2-4), 145-151, 2003
Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
GB Alers, DJ Werder, Y Chabal, HC Lu, EP Gusev, E Garfunkel, ...
Applied Physics Letters 73 (11), 1517-1519, 1998
Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges
EP Gusev, V Narayanan, MM Frank
IBM Journal of Research and Development 50 (4.5), 387-410, 2006
Ultrathin high-K gate stacks for advanced CMOS devices
EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
S Zafar, A Callegari, E Gusev, MV Fischetti
Journal of Applied physics 93 (11), 9298-9303, 2003
Threshold voltage instabilities in high-/spl kappa/gate dielectric stacks
S Zafar, A Kumar, E Gusev, E Cartier
IEEE Transactions on Device and Materials Reliability 5 (1), 45-64, 2005
Growth and characterization of ultrathin nitrided silicon oxide films
EP Gusev, HC Lu, EL Garfunkel, T Gustafsson, ML Green
IBM journal of research and development 43 (3), 265-286, 1999
Growth mechanism of thin silicon oxide films on Si (100) studied by medium-energy ion scattering
EP Gusev, HC Lu, T Gustafsson, E Garfunkel
Physical Review B 52 (3), 1759, 1995
Germanium channel MOSFETs: Opportunities and challenges
H Shang, MM Frank, EP Gusev, JO Chu, SW Bedell, KW Guarini, M Ieong
IBM Journal of Research and Development 50 (4.5), 377-386, 2006
Hybrid-orientation technology (HOT): Opportunities and challenges
M Yang, VWC Chan, KK Chan, L Shi, DM Fried, JH Stathis, AI Chou, ...
IEEE Transactions on Electron Devices 53 (5), 965-978, 2006
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
M Yang, EP Gusev, M Ieong, O Gluschenkov, DC Boyd, KK Chan, ...
IEEE Electron Device Letters 24 (5), 339-341, 2003
Field effect devices and capacitors with improved thin film dielectrics and method for making same
D Brasen, EL Garfunkel, ML Green, EP Gusev
US Patent 5,861,651, 1999
Robustness of ultrathin aluminum oxide dielectrics on Si (001)
M Copel, E Cartier, EP Gusev, S Guha, N Bojarczuk, M Poppeller
Applied Physics Letters 78 (18), 2670-2672, 2001
Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge (100)
EP Gusev, H Shang, M Copel, M Gribelyuk, C D’emic, P Kozlowski, ...
Applied physics letters 85 (12), 2334-2336, 2004
80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/gate dielectric for ULSI applications
DA Buchanan, EP Gusev, E Cartier, H Okorn-Schmidt, K Rim, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
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