Anders Blom
Anders Blom
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Zitiert von
Zitiert von
QuantumATK: an integrated platform of electronic and atomic-scale modelling tools
S Smidstrup, T Markussen, P Vancraeyveld, J Wellendorff, J Schneider, ...
Journal of Physics: Condensed Matter 32 (1), 015901, 2019
Semiempirical model for nanoscale device simulations
K Stokbro, DE Petersen, S Smidstrup, A Blom, M Ipsen, K Kaasbjerg
Physical Review B—Condensed Matter and Materials Physics 82 (7), 075420, 2010
General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and nonequilibrium Green's function
D Stradi, U Martinez, A Blom, M Brandbyge, K Stokbro
Physical Review B 93 (15), 155302, 2016
ATK-ForceField: a new generation molecular dynamics software package
J Schneider, J Hamaekers, ST Chill, S Smidstrup, J Bulin, R Thesen, ...
Modelling and Simulation in Materials Science and Engineering 25 (8), 085007, 2017
Molecular structure of vapor-deposited amorphous selenium
AH Goldan, C Li, SJ Pennycook, J Schneider, A Blom, W Zhao
Journal of Applied Physics 120 (13), 2016
Atomic-scale model for the contact resistance of the nickel-graphene interface
K Stokbro, M Engelund, A Blom
Physical Review B—Condensed Matter and Materials Physics 85 (16), 165442, 2012
Uncertainty of oscillator strengths derived from lifetimes and branching fractions
CM Sikström, H Nilsson, U Litzén, A Blom, H Lundberg
Journal of Quantitative Spectroscopy and Radiative Transfer 74 (3), 355-368, 2002
Donor states in modulation-doped Si/SiGe heterostructures
A Blom, MA Odnoblyudov, IN Yassievich, KA Chao
Physical Review B 68 (16), 165338, 2003
Parametrization of the Zeeman effect for hydrogen-like spectra in high-temperature plasmas
A Blom, C Jupén
Plasma physics and controlled fusion 44 (7), 1229, 2002
Mechanism of terahertz lasing in SiGe/Si quantum wells
A Blom, MA Odnoblyudov, HH Cheng, IN Yassievich, KA Chao
Applied Physics Letters 79 (6), 713-715, 2001
Magnetoresistance and negative differential resistance in Ni/graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study
KK Saha, A Blom, KS Thygesen, BK Nikolić
Physical Review B—Condensed Matter and Materials Physics 85 (18), 184426, 2012
Resonant states induced by impurities in heterostructures
A Blom, MA Odnoblyudov, IN Yassievich, KA Chao
Physical Review B 65 (15), 155302, 2002
On the electron transfer through Geobacter sulfurreducens PilA protein
N Lebedev, S Mahmud, I Griva, A Blom, LM Tender
Journal of Polymer Science Part B: Polymer Physics 53 (24), 1706-1717, 2015
The effects of uniaxial and biaxial strain on the electronic structure of germanium
K Sakata, B Magyari-Köpe, S Gupta, Y Nishi, A Blom, P Deák
Computational Materials Science 112, 263-268, 2016
Hole transport due to shallow acceptors along boron doped SiGe quantum wells
IV Altukhov, MS Kagan, VP Sinis, SG Thomas, KL Wang, A Blom, ...
Thin Solid Films 380 (1-2), 218-220, 2000
Internal Control of Electron Transfer through a Single Iron Atom by Chelating Porphyrin
N Lebedev, I Griva, A Blom
The Journal of Physical Chemistry C 117 (14), 6933-6939, 2013
Effect of iron doping on protein molecular conductance
N Lebedev, I Griva, A Blom, LM Tender
Physical Chemistry Chemical Physics 20 (20), 14072-14081, 2018
Properties of homo-and hetero-Schottky junctions from first principle calculations
JC Greer, A Blom, L Ansari
Journal of Physics: Condensed Matter 30 (41), 414003, 2018
Exact solution of the Zeeman effect in single-electron systems
A Blom
Physica Scripta 2005 (T120), 90, 2005
First-principles simulations of nanoscale transistors
A Blom, UM Pozzoni, T Markussen, K Stokbro
2015 International Conference on Simulation of Semiconductor Processes and …, 2015
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