Bikash C. Barik
Bikash C. Barik
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Zitiert von
Zitiert von
Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application
R Sarkar, S Bhunia, D Nag, BC Barik, K Das Gupta, D Saha, S Ganguly, ...
Applied Physics Letters 115 (6), 2019
Formation of tungsten carbide by focused ion beam process: A route to high magnetic field resilient patterned superconducting nanostructures
H Chakraborti, BP Joshi, CK Barman, AK Jain, B Pal, BC Barik, T Maiti, ...
Applied Physics Letters 120 (13), 2022
Development of a PNA–DiSc 2 based portable absorbance platform for the detection of pathogen nucleic acids
SB Lad, S Roy, JE George, H Chakraborti, S Lalsare, B Barik, A Singh, ...
Analyst 147 (23), 5306-5313, 2022
Low frequency resistance fluctuations in an ionic liquid gated channel probed by cross-correlation noise spectroscopy
BC Barik, H Chakraborti, AK Jain, B Pal, HE Beere, DA Ritchie, KD Gupta
arXiv preprint arXiv:2402.13363, 2024
Development of an ionic-liquid gated device on a degenerate semiconductor (Indium Nitride) with a superconducting phase.
BC Barik, H Chakraborti, B Pal, A Jain, S Bhunia, A Laha, KD Gupta
International Conference on the Electronic Properties of Two-Dimensional …, 2023
Interfacial superconductivity above Pauli limit in homogeneously disordered tungsten carbide-Ga composite
H Chakraborti, BP Joshi, CK Barman, AK Jain, B Pal, BC Barik, T Maiti, ...
arXiv e-prints, arXiv: 2103.09590, 2021
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